型号 SI7212DN-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET N-CH D-S 30V 1212-8 PPAK
SI7212DN-T1-GE3 PDF
代理商 SI7212DN-T1-GE3
标准包装 1
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 4.9A
开态Rds(最大)@ Id, Vgs @ 25° C 36 毫欧 @ 6.8A,10V
Id 时的 Vgs(th)(最大) 1.6V @ 250µA
闸电荷(Qg) @ Vgs 11nC @ 4.5V
功率 - 最大 1.3W
安装类型 表面贴装
封装/外壳 PowerPAK? 1212-8 双
供应商设备封装 PowerPAK? 1212-8 Dual
包装 标准包装
其它名称 SI7212DN-T1-GE3DKR
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